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BPW41N
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p = 950 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle.
Features
D D D D D D D
Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity = 65 High radiant sensitivity Fast response times Small junction capacitance Plastic case with IR filter (l=950 nm) Suitable for near infrared radiation
94 8480
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 -55...+100 260 350 Unit V mW C C C K/W
x 25 C
t
x5s
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
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BPW41N
Basic Characteristics
Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance p Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power Rise Time Fall Time Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Symbol V(BR) Iro CD CD Vo TKVo Ik TKIk Ira Min 60 Typ 2 70 25 350 -2.6 38 0.1 45 65 950 870...1050 4x10-14 100 100 Max 30 40 Unit V nA pF pF mV mV/K
mA mA
%/K
43
VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm
lp l0.5
NEP tr tf
deg nm nm W/ Hz ns ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA ) 1.4
1.2
100
l=950nm
VR=5V
1.0
10
0.8
VR=10V 1 20 40 60 80 100
0.6 0
94 8409
20
40
60
80
100
94 8403
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
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TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
BPW41N
S ( l ) rel - Relative Spectral Sensitivity 10 )
94 8408
1000 Ira - Reverse Light Current ( m A )
1.2 1.0 0.8 0.6 0.4 0.2 0 750
100
10 VR=5V l=950nm
1
0.1 0.01
94 8414
0.1 Ee - Irradiance (
1 mW / cm2
850
950
1050
1150
l - Wavelength ( nm )
Figure 3. Reverse Light Current vs. Irradiance
100 Ira - Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2
l=950nm
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0 10 20
30
S rel - Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80
10
0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
1 0.1
94 8415
1
10
100
94 8406
0.6
0.4
0.2
0
0.2
0.4
0.6
VR - Reverse Voltage ( V )
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
80 CD - Diode Capacitance ( pF ) E=0 f=1MHz 60
40
20
0 0.1
94 8407
1
10
100
VR - Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
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BPW41N
Dimensions in mm
96 12195
4 (5)
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
BPW41N
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96
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